Dependence of Ga-doped ZnO thin film properties on different sputtering process parameters: Substrate temperature, sputtering pressure and bias voltage

This paper reports on the effects of different sputtering deposition process parameters (substrate temperature, sputtering pressure and bias voltage) on the electrical, optical, structural and morphological properties of gallium-doped ZnO (ZnO:Ga) of ~1 μm thick. These highly transparent and conduct...

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Detalhes bibliográficos
Autor principal: Castro, M. V. (author)
Outros Autores: Tavares, C. J. (author)
Formato: article
Idioma:eng
Publicado em: 2015
Assuntos:
Thin films
Transparent conducting oxide
Gallium-doped zinc oxide
Sputtering
Electrical properties
Pressure
Bias voltage
Substrate temperature
Ciências Naturais::Ciências Físicas
Science & Technology
Texto completo:http://hdl.handle.net/1822/36973
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/36973

Texto Completo

http://hdl.handle.net/1822/36973

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