The effect of water related traps on the reliability of organic based transistors
The electrical stability of metal-insulator semiconductor (MIS) capacitors and field-effect transistor structures based in organic semiconductors were investigated. The device characteristics were studied using steady state measurements AC admittance measurements as well as techniques for addressing...
| Autor principal: | |
|---|---|
| Outros Autores: | , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2015
|
| Texto completo: | http://hdl.handle.net/10400.1/6610 |
| País: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/6610 |
| Resumo: | The electrical stability of metal-insulator semiconductor (MIS) capacitors and field-effect transistor structures based in organic semiconductors were investigated. The device characteristics were studied using steady state measurements AC admittance measurements as well as techniques for addressing trap states. Temperature-dependent measurements show clear evidence that an electrical instability occurs above 200 K and is caused by an electronic trapping process. Experimental results show that water is responsible for the trapping mechanism. (c) 2006 Elsevier B.V. All rights reserved. |
|---|