Photocapacitance measurements in irradiated a-Si:H based detectors
Photocapacitance measurements were performed on amorphous silicon p–i–n detectors before and after particle irradiation with 1.5 MeV 4 He+ ions. The spatial resolution across a degraded spot is similar to the one obtained in photocurrent scans and is of the order of the diameter of the scanning lase...
| Autor principal: | |
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| Outros Autores: | , , , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2014
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10400.1/3301 |
| País: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/3301 |