Photocapacitance measurements in irradiated a-Si:H based detectors

Photocapacitance measurements were performed on amorphous silicon p–i–n detectors before and after particle irradiation with 1.5 MeV 4 He+ ions. The spatial resolution across a degraded spot is similar to the one obtained in photocurrent scans and is of the order of the diameter of the scanning lase...

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Bibliographic Details
Main Author: Schwarz, R. (author)
Other Authors: Mardolcar, U. (author), Vygranenko, Y. (author), Vieira, M. (author), Casteleiro, C. (author), Stallinga, Peter (author), Gomes, Henrique L. (author)
Format: article
Language:eng
Published: 2014
Subjects:
Silicon
Radiation
Sensors
Defects
Online Access:http://hdl.handle.net/10400.1/3301
Country:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/3301

Internet

http://hdl.handle.net/10400.1/3301

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