Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire

Mid-band-gap emissions in GaN epilayers grown on 6H-SiC and sapphire are studied by time-resolved spectroscopy (TRS). The yellow luminescence peaking at ca. 2.2 eV at low-temperature shifts to higher energies with increasing temperature. The presence of emission with the same characteristics in samp...

ver descrição completa

Detalhes bibliográficos
Autor principal: Monteiro, T. (author)
Outros Autores: Pereira, E. (author), Correia, M. R. (author), Xavier, C. (author), Hofmann, D. M. (author), Meyer, B. K. (author), Fischer, S. (author), Cremades, A. (author), Piqueras, J. (author)
Formato: article
Idioma:eng
Publicado em: 1000
Assuntos:
GaN
Yellow luminescence
Texto completo:http://hdl.handle.net/10773/6486
País:Portugal
Oai:oai:ria.ua.pt:10773/6486

Texto Completo

http://hdl.handle.net/10773/6486

Registros relacionados