Transport properties of graphene with one-dimensional charge de- fects

We study the e ect of extended charge defects in electronic transport properties of graphene. Extended defects are ubiquitous in chemically and epitaxially grown graphene samples due to internal strains associated with the lattice mismatch. We show that at low energies these defects interact quite s...

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Detalhes bibliográficos
Autor principal: Ferreira, Aires (author)
Outros Autores: Chang-Lin Tan (author), Peres, N. M. R. (author), Ozyilmaz, Barbaros (author), Xiangfan Xu (author), Su-Kang Bae (author), Byung-Hee Hong (author), Castro Neto, A. H. (author)
Formato: article
Idioma:eng
Publicado em: 2011
Assuntos:
Graphene
Electronic transport in graphene
Science & Technology
Texto completo:http://hdl.handle.net/1822/12896
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/12896
Descrição
Resumo:We study the e ect of extended charge defects in electronic transport properties of graphene. Extended defects are ubiquitous in chemically and epitaxially grown graphene samples due to internal strains associated with the lattice mismatch. We show that at low energies these defects interact quite strongly with the 2D Dirac fermions and have an important ef ect in the DC-conductivity of these materials.

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