Transport properties of graphene with one-dimensional charge de- fects

We study the e ect of extended charge defects in electronic transport properties of graphene. Extended defects are ubiquitous in chemically and epitaxially grown graphene samples due to internal strains associated with the lattice mismatch. We show that at low energies these defects interact quite s...

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Bibliographic Details
Main Author: Ferreira, Aires (author)
Other Authors: Chang-Lin Tan (author), Peres, N. M. R. (author), Ozyilmaz, Barbaros (author), Xiangfan Xu (author), Su-Kang Bae (author), Byung-Hee Hong (author), Castro Neto, A. H. (author)
Format: article
Language:eng
Published: 2011
Subjects:
Graphene
Electronic transport in graphene
Science & Technology
Online Access:http://hdl.handle.net/1822/12896
Country:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/12896
Description
Summary:We study the e ect of extended charge defects in electronic transport properties of graphene. Extended defects are ubiquitous in chemically and epitaxially grown graphene samples due to internal strains associated with the lattice mismatch. We show that at low energies these defects interact quite strongly with the 2D Dirac fermions and have an important ef ect in the DC-conductivity of these materials.

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