Enhancement of near infrared emission in La co-doped ZnO/Er nanoplates

Undoped and rare earth doped Er, Er/Yb and Er/Yb/La ZnO nanoplates were synthesized in order to study the effect of La co-doping on near infrared (NIR) emission properties of the Er ions hosted in the semiconductor. Samples were characterized by X-ray diffraction, scanning electron microscope, energ...

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Detalhes bibliográficos
Autor principal: Zamiri, Reza (author)
Outros Autores: Rebelo, Avito (author), Ahangar, Hossein Abbastabar (author), Belsley, M. (author), Ferreira, J. M F (author)
Formato: article
Idioma:eng
Publicado em: 2014
Assuntos:
Texto completo:http://hdl.handle.net/1822/48265
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/48265
Descrição
Resumo:Undoped and rare earth doped Er, Er/Yb and Er/Yb/La ZnO nanoplates were synthesized in order to study the effect of La co-doping on near infrared (NIR) emission properties of the Er ions hosted in the semiconductor. Samples were characterized by X-ray diffraction, scanning electron microscope, energy-dispersive X-ray spectroscopy. Emission spectra of the La co-doped Er/Yb ZnO nanoplates showed an efficiency enhancement of Er ion emission in NIR region around 1550 nm which is a very important wavelength for optical communication technologies. The enhancement mechanism for the NIR emission is discussed in detail. © 2014 Elsevier Ltd and Techna Group S.r.l.