Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaN

Silicon is until now the most promising dopant for n-type GaN. Besides the near-band-gap emission centred at 3.461 eV, which becomes broader with increasing Si concentration also transitions at lower energies are observed. These emissions decrease strongly when the silicon concentration increases. W...

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Bibliographic Details
Main Author: Seitz, R. (author)
Other Authors: Gaspar, C. (author), Monteiro, T. (author), Pereira, E. (author), Leroux, M. (author), Beaumont, B. (author), Gibart, P. (author)
Format: article
Language:eng
Published: 1000
Subjects:
GaN
Mid-band-gap emissions
Si-doping
Time resolved luminescence
Electron emission
Electron spectroscopy
Electron transitions
Energy gap
Luminescence of solids
Semiconductor doping
Silicon
Time resolved spectroscopy
Semiconducting gallium compounds
Online Access:http://hdl.handle.net/10773/6632
Country:Portugal
Oai:oai:ria.ua.pt:10773/6632
Description
Summary:Silicon is until now the most promising dopant for n-type GaN. Besides the near-band-gap emission centred at 3.461 eV, which becomes broader with increasing Si concentration also transitions at lower energies are observed. These emissions decrease strongly when the silicon concentration increases. While the near-band-gap emission is due to fast transitions (with decays shorter than 10 μs) the lower energy emissions have longer components whose behaviour is discussed. © 1998 Elsevier Science B.V. All rights reserved.

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