Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaN

Silicon is until now the most promising dopant for n-type GaN. Besides the near-band-gap emission centred at 3.461 eV, which becomes broader with increasing Si concentration also transitions at lower energies are observed. These emissions decrease strongly when the silicon concentration increases. W...

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Detalhes bibliográficos
Autor principal: Seitz, R. (author)
Outros Autores: Gaspar, C. (author), Monteiro, T. (author), Pereira, E. (author), Leroux, M. (author), Beaumont, B. (author), Gibart, P. (author)
Formato: article
Idioma:eng
Publicado em: 1000
Assuntos:
GaN
Mid-band-gap emissions
Si-doping
Time resolved luminescence
Electron emission
Electron spectroscopy
Electron transitions
Energy gap
Luminescence of solids
Semiconductor doping
Silicon
Time resolved spectroscopy
Semiconducting gallium compounds
Texto completo:http://hdl.handle.net/10773/6632
País:Portugal
Oai:oai:ria.ua.pt:10773/6632
Descrição
Resumo:Silicon is until now the most promising dopant for n-type GaN. Besides the near-band-gap emission centred at 3.461 eV, which becomes broader with increasing Si concentration also transitions at lower energies are observed. These emissions decrease strongly when the silicon concentration increases. While the near-band-gap emission is due to fast transitions (with decays shorter than 10 μs) the lower energy emissions have longer components whose behaviour is discussed. © 1998 Elsevier Science B.V. All rights reserved.

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