Defect studies and optical activation of Yb doped GaN

Wide band-gap semiconductors, particularly III-nitrides, became one of the most studied materials during the last decades. These compounds are the base of a new generation of optoelectronic devices operating in the UV-Blue region of the electromagnetic spectrum. Incorporation of rare-earth (RE) ions...

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Bibliographic Details
Main Author: Lorenz, K. (author)
Other Authors: Alves, E. (author), Magalhes, S. (author), Peres, M. (author), Monteiro, T. (author), Kozanecki, A. (author), Valerio, M.E.G. (author)
Format: article
Language:eng
Published: 1000
Subjects:
Defect study
Doped materials
Electroluminescent devices
Electromagnetic spectra
III-nitrides
Lattice sites
Non-radiative recombinations
Optical activation
Optical activity
Optical behaviour
Orders of magnitude
Rutherford backscattering/channeling
Structural behaviour
Wide-band-gap semiconductor
Online Access:http://hdl.handle.net/10773/6634
Country:Portugal
Oai:oai:ria.ua.pt:10773/6634

Internet

http://hdl.handle.net/10773/6634

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