SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing a...

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Detalhes bibliográficos
Autor principal: Vieira, E. M. F. (author)
Outros Autores: Toudert, J. (author), Rolo, Anabela G. (author), Parisini, A. (author), Leitão, J. P. (author), Correia, M. R. (author), Franco, N. (author), Alves, E. (author), Chahboun, Adil (author), Martín-Sánchez, J. (author), Serna, R. (author), Gomes, M. J. M. (author)
Formato: article
Idioma:eng
Publicado em: 2017
Assuntos:
SiGe
multilayer structure
RF magnetron sputtering
TEM
photoluminescence
spectroscopic ellipsometry
Raman spectroscopy
nanocrystals
SiGe nanocrystals
Ciências Naturais::Ciências Físicas
Science & Technology
Texto completo:http://hdl.handle.net/1822/49067
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/49067

Texto Completo

http://hdl.handle.net/1822/49067

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