The use of bismuth(III) dithiocarbamato complexes as precursors for the low-pressure MOCVD of Bi2S3

Communication: The potential use of Bi2S3 in thermoelectronic coolers and photodiode arrayshas attracted considerable interest recently. The successful deposition of Bi2S3 by low-pressure MOCVD is reported for the first time. The use of single-source precursors Bi(S2CNEt2)3 and Bi(S2CNMe-nHex)3 prod...

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Detalhes bibliográficos
Autor principal: Monteiro, Olinda C. (author)
Outros Autores: Trindade, Tito (author), Park, Jin H. (author), O'Brien, Paul (author)
Formato: article
Idioma:eng
Publicado em: 2000
Assuntos:
Bismuth sulfide
Carbamates
Dithio
MOCVD
Low pressure
Single-source precursors
Texto completo:http://hdl.handle.net/10773/5950
País:Portugal
Oai:oai:ria.ua.pt:10773/5950
Descrição
Resumo:Communication: The potential use of Bi2S3 in thermoelectronic coolers and photodiode arrayshas attracted considerable interest recently. The successful deposition of Bi2S3 by low-pressure MOCVD is reported for the first time. The use of single-source precursors Bi(S2CNEt2)3 and Bi(S2CNMe-nHex)3 produces strongly adhered polycrystalline films on glass substrates at 400–450 °C. XPS and EDX analyses confirm that the deposited film surface is predominantly Bi2S3 and no elemental contamination is detected.

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