The use of bismuth(III) dithiocarbamato complexes as precursors for the low-pressure MOCVD of Bi2S3

Communication: The potential use of Bi2S3 in thermoelectronic coolers and photodiode arrayshas attracted considerable interest recently. The successful deposition of Bi2S3 by low-pressure MOCVD is reported for the first time. The use of single-source precursors Bi(S2CNEt2)3 and Bi(S2CNMe-nHex)3 prod...

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Bibliographic Details
Main Author: Monteiro, Olinda C. (author)
Other Authors: Trindade, Tito (author), Park, Jin H. (author), O'Brien, Paul (author)
Format: article
Language:eng
Published: 2000
Subjects:
Bismuth sulfide
Carbamates
Dithio
MOCVD
Low pressure
Single-source precursors
Online Access:http://hdl.handle.net/10773/5950
Country:Portugal
Oai:oai:ria.ua.pt:10773/5950
Description
Summary:Communication: The potential use of Bi2S3 in thermoelectronic coolers and photodiode arrayshas attracted considerable interest recently. The successful deposition of Bi2S3 by low-pressure MOCVD is reported for the first time. The use of single-source precursors Bi(S2CNEt2)3 and Bi(S2CNMe-nHex)3 produces strongly adhered polycrystalline films on glass substrates at 400–450 °C. XPS and EDX analyses confirm that the deposited film surface is predominantly Bi2S3 and no elemental contamination is detected.

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