Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation

Self-assembled GaN quantum dots (QDs) stacked in superlattices (SL) with AlN spacer layers were implanted with Europium ions to fluences of 1013, 1014, and 1015 cm−2. The damage level introduced in the QDs by the implantation stays well below that of thick GaN epilayers. For the lowest fluence, the...

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Detalhes bibliográficos
Autor principal: Magalhães, S. (author)
Outros Autores: Peres, M. (author), Fellmann, V. (author), Daudin, B. (author), Neves, A.J. (author), Alves, E. (author), Monteiro, T. (author), Lorenz, K. (author)
Formato: article
Idioma:eng
Publicado em: 2012
Assuntos:
Aluminium compounds
Annealing
Europium
Gallium compounds
III-V semiconductors
Ion implantation
Self-assembly
Semiconductor quantum dots
Semiconductor superlattices
Wide band gap semiconductors
Texto completo:http://hdl.handle.net/10773/6127
País:Portugal
Oai:oai:ria.ua.pt:10773/6127

Texto Completo

http://hdl.handle.net/10773/6127

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