Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination

Undoped self-assembled GaN quantum dots (QD) stacked in superlattices (SL) with AlN spacer layers were submitted to thermal annealing treatments. Changes in the balance between the quantum confinement, strain state of the stacked heterostructures and quantum confined Stark effect lead to the observa...

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Bibliographic Details
Main Author: Peres, Marco (author)
Other Authors: Magalhães, Sérgio (author), Fellmann, Vincent (author), Daudin, Bruno (author), Neves, Armando José (author), Alves, Eduardo (author), Lorenz, Katharina (author), Monteiro, Teresa (author)
Format: article
Language:eng
Published: 2013
Subjects:
GaN quantum dots
PL
PLE
Online Access:http://hdl.handle.net/10773/9585
Country:Portugal
Oai:oai:ria.ua.pt:10773/9585

Internet

http://hdl.handle.net/10773/9585

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