Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination

Undoped self-assembled GaN quantum dots (QD) stacked in superlattices (SL) with AlN spacer layers were submitted to thermal annealing treatments. Changes in the balance between the quantum confinement, strain state of the stacked heterostructures and quantum confined Stark effect lead to the observa...

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Detalhes bibliográficos
Autor principal: Peres, Marco (author)
Outros Autores: Magalhães, Sérgio (author), Fellmann, Vincent (author), Daudin, Bruno (author), Neves, Armando José (author), Alves, Eduardo (author), Lorenz, Katharina (author), Monteiro, Teresa (author)
Formato: article
Idioma:eng
Publicado em: 2013
Assuntos:
GaN quantum dots
PL
PLE
Texto completo:http://hdl.handle.net/10773/9585
País:Portugal
Oai:oai:ria.ua.pt:10773/9585

Texto Completo

http://hdl.handle.net/10773/9585

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