Blue-enhanced thin-film photodiode for dual-screen x-ray imaging

This article reports on a-Si:H-based low-leakage blue-enhanced photodiodes for dual-screen x-ray imaging detectors. Doped nanocrystalline silicon was incorporated in both the n- and p-type regions to reduce absorption losses for light incoming from the top and bottom screens. The photodiode exhibits...

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Detalhes bibliográficos
Autor principal: Vygranenko, Yuri (author)
Outros Autores: Sazonov, A. (author), Heiler, G. (author), Tredwell, T. (author), Vieira, Manuela (author), Nathan, Arokia (author)
Formato: article
Idioma:eng
Publicado em: 2012
Assuntos:
Current density
p-i-n photodiodes
Thin films
X-ray imaging
Texto completo:http://hdl.handle.net/10400.21/1268
País:Portugal
Oai:oai:repositorio.ipl.pt:10400.21/1268
Descrição
Resumo:This article reports on a-Si:H-based low-leakage blue-enhanced photodiodes for dual-screen x-ray imaging detectors. Doped nanocrystalline silicon was incorporated in both the n- and p-type regions to reduce absorption losses for light incoming from the top and bottom screens. The photodiode exhibits a dark current density of 900 pA/cm(2) and an external quantum efficiency up to 90% at a reverse bias of 5 V. In the case of illumination through the tailored p-layer, the quantum efficiency of 60% at a 400 nm wavelength is almost double that for the conventional a-Si:H n-i-p photodiode.

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