Electrical resistivity of acceptor carbon in GaAs

The electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 1017 and 1019 cm-³. Good agreement was obtained between the measured resistivities and resistivities calculated by...

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Detalhes bibliográficos
Autor principal: Silva, Antonio Ferreira da (author)
Outros Autores: Pepe, I. (author), Sernelius, Bo E. (author), Persson, C. (author), Ahuja, R. (author), Souza, Joel Pereira de (author), Suzuki, Yoko (author), Yang, Y. (author)
Formato: other article
Idioma:eng
Publicado em: 2014
Assuntos:
Carbono
Resistividade elétrica
Arseneto de galio
Semicondutores iii-v
Implantacao ionica
Transição metal isolante
Dopagem de semicondutores
Texto completo:http://hdl.handle.net/10183/95830
País:Brasil
Oai:oai:www.lume.ufrgs.br:10183/95830

Texto Completo

http://hdl.handle.net/10183/95830

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