Impurity resistivity of the double-donor system Si:P,Bi

The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach for the same t...

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Bibliographic Details
Main Author: Silva, Antonio Ferreira da (author)
Other Authors: Sernelius, Bo E. (author), Souza, Joel Pereira de (author), Boudinov, Henri Ivanov (author), Zheng, Hairong (author), Sarachik, M.P. (author)
Format: other article
Language:eng
Published: 2014
Subjects:
Impurezas
Implantação de íons
Temperatura
Condutividade elétrica
Dopagem de semicondutores
Retroespalhamento rutherford
Semicondutores
Transição metal isolante
Boro
Fósforo
Silício
Online Access:http://hdl.handle.net/10183/104254
Country:Brazil
Oai:oai:www.lume.ufrgs.br:10183/104254

Internet

http://hdl.handle.net/10183/104254

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